Polyaniline Based Field Effect Transistor for Humidity Sensor

In this present research work, we presented a new Bottom Gate P-Type Organic Field Effect Transistor (OFET) humidity sensor and its applicability towards has been experimentally demonstrated. P-type organic semiconductor polyaniline (PANI) used in variety of applications, including logic circuit components, electromagnetic shielding, chemical sensing, anticorrosion. Humidity can be to monitor relative (RH) various environments. We only focus on the fabrication conducting polymer OFETs with top contact measure verify I-V properties. The current saturation (ISat) p-type was 0.8 μA, while threshold voltage VTh 2.2 V. results FESEM have perform confirm that deposited thin film grown substrate is purely uniform. Proposed shows gate dielectrics are low-cost alternative inorganic good electrical performance. proposed OFET-based sensors number benefits, such as high sensitivity, low cost, quick response, physical flexibility.